Built-in self-test arrangement for integrated circuit memory devices

ABSTRACT

An integrated circuit has a built-in self-test (BIST) arrangement ( 60 ). The built-in self-test arrangement includes a read only memory (ROM), ( 140 ) that stores test algorithm instructions. A ROM logic circuit ( 410 ) receives an instruction read from the read only memory and produces a group of output signals dependent upon the instruction. A BIST register  420  receives and stores the group of output signals from the logic circuit for controlling self-test of the integrated circuit.

This is a divisional of application Ser. No. 10/918,813 filed on Aug.12, 2004, now pending, which is a division of application Ser. No.10/023,308, filed Dec. 17, 2001, now U.S. Pat. No. 6,801,461, which is adivision of application Ser. No. 09/268,281 filed Mar. 15, 1999, nowU.S. Pat. No. 6,353,563, which is a continuation of Ser. No. 08/846,922filed Apr. 30, 1997, now U.S. Pat. No. 5,883,843, which claims priorityfrom provisional application 60/061,516 filed Apr. 30, 1996.

FIELD OF THE INVENTION

This invention, relates to the field of testing an integrated circuitdevice and more particularly to a built-in self-test (BIST) arrangementfor an integrated circuit device.

BACKGROUND OF THE INVENTION

In conventional testing of memory devices, a tester is used to supplythe control signals such as RAS, CAS and WE, address signals, such asAo-An, and data to the device under test. Outputs from the device undertest are sampled by the tester to determine whether the device passes orfails. Testing of memories requires longer tester times, as devicedensity increases. This results in escalating test cost. As the capacityof integrated circuit memory devices increases to 256 Mbits and above,testing time per device becomes a major component of cost of integratedcircuit memory devices.

One way to test integrated circuit memory devices in less time perdevice is to apply a single test data bit to several cells concurrentlyby multiplexing the single bit to the several cells in parallel. Somefailures, however, cannot be screened unless a single cell is accessedat a time. With limited parallelism, i.e., a number of units beingtested simultaneously, high test time also translates into a longmanufacturing cycle time. Testing of one batch of memory devicesrequires most of the other devices to be waiting in queue to be testedwhile some of the memory devices are actually undergoing functionaltest. One solution would be to get more testers, but this is notpractical as it involves even higher cost. The time to deliver a batchof tested memory devices to a customer increases as a result. Anothersolution is to apply the test from the testers in parallel to thedevices under test. The problem with this solution is that the parallelleads occasionally cause good devices to fail because of cross talkamong the parallel leads.

Thus there is a problem in finding some way to efficiently test largecapacity memory devices without requiring an enormous amount of time ona tester per memory device.

SUMMARY OF THE INVENTION

This problem and others are resolved by an integrated circuit which hasa built-in self-test (BIST) arrangement. The built-in self-testarrangement includes a read only memory that stores test algorithminstructions. A logic circuit, receives an instruction read from theread only memory and produces a group of output signals dependent uponthe instruction. A BIST register receives and stores the group of outputsignals from the logic circuit for controlling self-test of theintegrated circuit. A pass/fail comparator circuit compares expecteddata bits with data bits written into and read from a memory array todetermine whether the integrate circuit passes or fails the test.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-4 when positioned as shown in FIG. 5 present a block diagram ofan integrated circuit memory device arranged with built-in self-testcircuitry;

FIG. 6 shows a plurality of devices mounted for concurrent testing;

FIG. 7 is a logic schematic of a test enabled shift register for BISToperation;

FIG. 8 is a block diagram of an address control circuit for the BISTarrangement;

FIGS. 9-12 are logic schematics used in the address control circuit ofFIG. 8;

FIGS. 13A-13C are schematic diagrams showing the operation of theaddress buffer of the memory device;

FIG. 14 is a logic diagram of a BIST detector circuit;

FIG. 15 is a timing diagram showing operating conditions of the detectorcircuit of FIG. 14;

FIGS. 16-21 are logic schematics of BIST address register circuits;

FIG. 22 is a logic schematic of a BIST clock generator circuit;

FIG. 23 is a table showing the register positions for storing datarepresenting what test operations should be enabled to run or notenabled to run for a specific self-test;

FIGS. 24 and 25 show a logic schematic of a BIST program control circuitthat includes a program counter;

FIG. 26 is a logic schematic of the BIST ROM decoder,

FIG. 27 is a schematic diagram of a BIST ROM for storing test algorithminstructions;

FIG. 28 is a table of data stored in the BIST ROM for determining theoperating sequences for several DRAM tests that can be run;

FIG. 29 is a table showing functions of bit stored in separate columnsof the BIST ROM;

FIGS. 30 and 31 are logic schematics for an exemplary ROM logic circuit;

FIG. 32 is table of VHDL language description of a Pass/Fail comparator;

FIG. 33 is a truth table and definitions;

FIG. 33 a shows a schematic of the Bist Internal Refresh Bit;

FIG. 34 shows a schematic of the Internal Refresh Oscillator;

FIG. 35 shows a schematic of the Address Reset Circuitry Sheet 1;

FIG. 36 shows a schematic of the Address Reset Circuitry Sheet2;

FIG. 37 shows a schematic of the Column Counter;

FIG. 38 shows a schematic of the 10 Bit Counter “A”;

FIG. 39 shows a schematic of the 10 Bit Counter “8”;

FIG. 40 shows a schematic of the Control ROM;

FIG. 41 shows a schematic of a Data Multiplexer (MUX);

FIG. 42 shows a schematic of the Data Multiplexer (MUX) (Con't);

FIG. 43 shows a schematic of Compare Circuitry;

FIG. 44 shows a schematic of Pass Fail detection circuitry;

FIG. 45 shows a schematic of the Refresh Counter;

FIG. 46 shows a schematic of the Row Counter;

FIG. 47 shows a schematic of the Timing Generator Sheet 1;

FIG. 48 shows a schematic of the Timing Generator Sheet 2;

FIG. 49 shows a schematic of the Timing Generator Sheet 3;

FIG. 50 shows a schematic of the Timing Generator Sheet 4;

FIG. 51 shows a schematic of the full BIST logic;

FIG. 52 shows a schematic of the full BIST functional logic;

FIG. 53 shows a schematic of the ROM Driver logic;

FIG. 54 shows a schematic of the Address Reset Enable;

FIG. 55 shows a schematic of the Row Counter;

FIG. 56 shows a schematic of the Column Counter;

FIG. 57 shows a schematic of the Refresh Counter;

FIG. 58 shows a schematic of the 10 bit Counter “A”;

FIG. 59 shows a schematic of the 10 bit Counter “B”;

FIG. 60 shows a diagram of the BIST block and Interface;

FIG. 61 shows a diagram of the BIST layout location;

FIG. 62 shows a diagram Algorithms and Timing sets;

FIG. 63 shows a diagram the entry/exit state transitions;

FIG. 64 shows a timing diagram;

FIG. 65 shows a diagram of the pin out and key signals for BIST;

FIG. 66 shows a table for clock multiplexing;

FIG. 67 shows a diagram the ROM Memory Map;

FIG. 68 shows a timing diagram for array access and program control;

FIG. 69 shows a timing diagram;

FIG. 70 shows a block diagram of the ROM interface;

FIG. 71 shows a diagram of the Instruction Timing;

FIG. 72 shows a diagram of the control words;

FIG. 73 shows a table of the timing sets;

FIG. 74 shows a diagram of the Timing Generator;

FIG. 75 shows a diagram of the Timing Sets;

FIG. 76 shows a diagram of the Multiplexer;

FIG. 77 shows a diagram of the DUT (Device Under Test) Timing;

FIG. 78 shows a diagram of the Address Control Bits for entry and testcontrol;

FIG. 79 shows a diagram of the DQ (Data/Output) multiplexing;

FIG. 80 shows a diagram of the address range selection;

FIG. 81 shows a diagram of the ROM programming schematic, option low;

FIG. 82 shows a diagram of the ROM programming schematic, option high;and

FIGS. 83 a-c shows a diagram of the Multiplexing Circuits.

DETAILED DESCRIPTION

Referring now to FIGS. 1-4, there is shown the block diagram of anintegrated circuit dynamic random access memory device 50 including abuilt-in self-test (BIST) arrangement 60. The device 50 is designed tooperate as a synchronous random access memory during normal operation.Alternatively the built-in self-test arrangement operates in adistinctive self-test mode at times while the device 50 is not operatingin the normal mode. The built-in self-test arrangement is designed suchthat all the test signals are generated internally to a device, and thearrangement only takes a simple setup to get the device into a self-testmode to perform a self test. With the simple setup up, the built-inself-test arrangement performs a memory self-test in a cost effectiveprocedure. The arrangement also allows many devices to be tested inparallel without being limited by tester resources.

While the device 50 operates in the normal mode, it operates like awell-known synchronous dynamic random access memory device. Row andcolumn addresses produced by a digital processor, such as amicroprocessor, are time multiplexed by way of the address bus A0-A13into an address buffer 100 until control signals RAS_ and CAS_,respectively, which load them. Thereafter they are decoded either by therow decoder 200 or the column decoder 210. The control signals RAS_ andCAS_ also are produced by the digital processor, which is not shown.

Depending upon the state of the write enable signal WE from the digitalprocessor, data is either written into or read out from storage cellslocated in the banks of the memory array 220. Data, to be written intothe banks of the memory array 220, is applied to the device 50 by way ofa data bus DQ0-DQ31. This in-coming data is buffered in a data buffercircuit 230 and forwarded by way of an internal data bus 240 to thememory array 220 where it is stored until it is written over or until itis no longer refreshed at specified intervals. While data is stored inthe memory array 220, that data can be addressed and read out of thearray 220 through the internal data bus 240 and the data buffer 230 tothe data bus DQ0-DQ31. This data bus DQ0-DQ31 typically is connected tothe data receiving and sending terminals of a digital processor, such asa microprocessor that is not shown.

Because the memory device 50 is a synchronous dynamic random accessmemory, a system clock signal CLK is applied to the device from anexternal source for synchronizing its operation with the digitalprocessor, peripheral devices, and control circuitry that are connectedin a system. The system clock is the clock which controls operation ofthe digital processor. The clock signal CLK is applied to a clock buffer110, which outputs an internal clock signal CLK for operating the memoryarray 220 during normal operation. This internal clock signal CLKcontrols operation of address decoding, writing data to the memoryarray, and reading data out of the memory array during such normalsynchronous memory operations.

The control signals RAS_, CAS_, and WE_, which are applied to the memorydevice 50 from the digital processor, are applied to a control signalbuffer 120. During normal mode operation, these control signals passthrough the control buffer 120 and a control bus 125 to the main controlunit 130 of the memory array 220. At the memory array 220 during normaloperation, these control signals RAS_, CAS_, and WE_ together with theinternal system clock signal CLK control operations of the array 220, aspreviously described.

Normal mode operation and self-test mode operation are two separate anddistinct operations of the memory device 50. Those two modes occuralternatively. Thus while the device 50 operates in its normal mode itis not able to inadvertently go into its self-test mode. Also while itis in its active self-test mode, it cannot inadvertently go into itsnormal mode. These are conditions that are imposed upon the operation ofthe device 50 by the built-in self-test arrangement 60 to be described.

As just mentioned, the self-test mode of operation is different from thenormal mode of operation. Self-test mode is entered only upon power upof the memory device 50. Special signal conditions are applied at thattime to put the device 50 into the self-test mode.

In this proposed BIST scheme, only DC signals are needed external to thedevice to enter the self-test mode and to actually proceed through theself-test. The following types of external DC signals are supplied:

-   -   a) An overvoltage on one of the multiplexed address pins (e.g.,        pin A4);    -   b) A switch on CS_ which allows both a ‘0’ and a ‘I’ to be        connected to it;    -   c) A logic level of ‘0’ or a ‘1’ on the rest of the address pins        for tests and options selections;    -   d) Pass, fail detection on one of the output pins;    -   e) An output detector pin to identify completion of the        self-test operations.

With the above set up, only DC signals are involved. No complex timingis needed. Thus there is no need to be concerned with signal quality.The signal quality to the device is always good since the signals areDC. Multiple devices can be put on a BIST board and self testedsimultaneously. Test cycle time can be reduced per device since BIST canbe applied to all devices on the BIST board in parallel.

FIG. 6 shows an arrangement for mounting several integrated circuitdevices which are interconnected in parallel so that they all can be setup at once for self-test. Once set up the self-test can be runconcurrently on some of or all of the devices.

While in self test operations, BIST circuits take over control of allthe signals such as CLK RAS_, CAS_, WE_, the address bits, and the databits. For example, a BIST address bit B_Ax is generated by the BISTcircuits. During a self-test operation, the BIST address bits replacethe externally generated address bits Ax. The BIST address bits B_Axinterface with the main circuit right out of the address buffer.

During normal mode operation, the BIST address bits B_Ax are notgenerated and are ignored. During power up, if a BIST request isdetected, the address lines are used to bring in information into theBIST arrangement. Referring now to FIG. 7, a test enabled shift register330 receives and stores data that determines whether or not specifictests are enabled. The data are stored in the shift register at therighthand side of FIG. 3. During active self-test mode, BIST generatedaddress signals are used for operating the device and externally appliedaddress signals Ax are ignored.

Referring now to FIG. 8 there is a block diagram of a BIST addresscontrol circuit 65 that controls generation of array addresses during anactive self-test operation. FIGS. 9, 10, 11 and 12 are logic schematicsof circuits included within the address control circuit 65 of FIG. 8.

The BIST signals interface with the main circuit as close to the bufferas possible to ensure that they closely simulate conventional testconditions. This will allow the BIST circuits to test as much of thememory device circuitry as possible.

FIGS. 13A_13C show the interface between BIST generated signals and themain devices. The main function of the BIST generated signals is toreplace the external signals that the memory device receives. Thus atthe BIST interface there is a multiplex circuit which chooses betweenthe BIST generated signals B-Ax and the external signals Ax fromoutside. The address lines are being used for multiple purposes, besidesthe above two cases, they are also used in power up to bring informationinto the BIST circuit, as illustrated in FIG. 13B. Control signalsB_PADDIS and B_IN_EN, generated by the self-test arrangement control howthe multiplexer operates at anytime.

The address bus A0-A13 of FIG. 1 is used for applying the special signalconditions for the self-test mode during and after power up. Anovervoltage signal is applied by way of one lead of the address busA0-A13 to a BIST detector circuit 300, which responds to the overvoltagecondition by putting itself in a standby self-test condition. In thisdescription the address lead A4 is used as an exemplary over voltagelead. While the BIST detector circuit 300 remains in its standbycondition, it allows the built-in self-test arrangement to prepare fortesting by accumulating information about a specific test to be run.Typically the specific test will be selected from a large group of testswhich might be run. The built-in self-test arrangement will remain inthe self-test standby condition until another input signal is applied.Meanwhile data can be written into or read out of the memory array 220,as if it were in the normal mode because the built-in self-testarrangement 60 is in standby rather than in active self-test mode.

The self-test arrangement 60 is put into the active self-test mode fromstandby by applying a high level signal CS_ by way of a lead 135 to theBIST detector circuit 300. The built-in self-test arrangement 60 and thememory device 50 will operate in the active self-test mode as long asthe signal CS_ remains at the high level and then return to normaloperation when the signal CS_goes to its low level.

Referring now to FIG. 14, the BIST detector circuit 300 includes inputterminals 301, 135, and 303 for receiving, respectively, a signal VUPB,an over voltage signal A4 from the lead of the address bus A0-AI3, andthe control signal CS_. An output lead 304 carries a built-in self-testenable signal BIST_EN that indicates when the device 50 is operating inits self-test mode. The BIST detector circuit 300 detects a BIST requestduring power up only. To detect a BIST request requires an overvoltageto be detected at power up and the signal CS_ having a value of ‘0’ atthat time. When the circuit 300 detects these two conditions at powerup, the chip goes into a BIST standby mode. While the circuit 300 is inBIST standby mode and the signal CS_ goes high, the circuit 300 entersthe self-test active mode.

FIG. 15 presents the timing diagram for the operation of the BISTdetector circuit 300 of FIG. 14. Several key signals are presented inFIG. 15 together with their interdependency. It is noted that all of thesignals applied to the BIST detector circuit 300 are fundamentallyvoltage levels. As will be demonstrated subsequently herein, no externalfluctuating control signals need to be applied to the memory device 50during the active self-test mode. All signals for performing therepertoire of tests are produced by the built-in self-test arrangement60 on the device 50.

A more detailed description of the arrangement and operation of the BISTdetector circuit 300 is presented in a co-pending patent application,Ser. No. 08/840,428 (TI-22640), now abandoned, which was filedconcurrently herewith. In that patent application, the BIST detectorcircuit 300 is referred to as an entry and exit control circuit. Thesubject matter of that patent application is incorporated herein byreference thereto.

Two signals, A4 and control signal CS_ are multiplexed for built-inself-test entry. The signal A4, or any other address bit, is multiplexedas an overvoltage. Control signal CS_ is used for timing BIST entry andEXIT. A BIST request is detected if an overvoltage is detected and thecontrol signal CS is low when the device is being powered up. If anovervoltage is detected at the falling edge of VUPB, the device will gointo BIST standby mode. The device will only go into BIST active mode ifthe control signal CS_ is subsequently pulled high. This will allow fullcontrol of the time to enter the BIST active mode. During BISToperation, if CS_ is pulled low, the device will exit BIST immediately.Normal operation occurs when CS_ is low. This prevents the BIST activemode from occurring during normal mode operation.

In BIST standby mode, the device can operate as if it were in normalmode. Note that the control signal CS_ behaves normally while the deviceis operating in normal mode. It is only in the BIST mode that thecontrol signal CS_ function differently. Design for test (DFT) modes canbe executed when device is in GIST standby mode. One of the ways to useDFT mode while in BIST standby is to have the address range mode loadstart and stop addresses before the BIST active mode operation.

Referring now to FIGS. 16-21, there are address range registers forstoring address information used during self-test operations. When aBIST request is detected, an internal signal B_SR_LOAD is generated toload in the information located on the address lines except the addressfor the overvoltage signal on lead A4. The information loaded incontains two sets of information. Test selection data on the addressleads A0-A3, A5-A10 determine whether or not each specific test s to berun in BIST active mode. Secondly, BIST operation options such asinternal external clock option, Full/sub array option, enable disableoutput option.

In FIG. 3, there is shown a BIST oscillator circuit 310 that includes anarrangement for generating a continuously repetitive clock signal B_CLKwhich is used to produce a group of specific clock signals forcontrolling different parts of the built-in self-test operation.

FIG. 22 is a logic schematic of a BIST clock generator circuit 350 ofFIG. 3. It derives BIST clock signals B_CLK_A, B_CLK_B, and B_CLK_C.

Upon entering the active self-test mode, the clock signal B_CLK isapplied to the clock buffer circuit 110 of FIG. 1 for taking overcontrol of the clock buffer circuit 110, which thereafter during theactive self-test mode produces the clock signal B_CLK to control accessto and the operations of the memory array 220, as well as parts of thebuilt-in self-test arrangement 60. Initially data from the addressbuffer 100 is transferred by way of an internal address bus 140 to anenabled tests circuit 330 in FIG. 3. Exemplary circuit 330 is a shiftregister arrangement that stores data identifying a specific test, or agroup of tests to be run during the relevant active self-test mode. Thisdata may be, for example, a high level for each test to be run and a lowlevel for each test that is not to be run. Once the selected test datais stored in the enabled tests circuit 330, a group of addresses may bestored in the address range registers 340.

Referring now to FIG. 23, there is shown a diagram of the informationthat is stored in the enabled test circuit 330. In FIG. 23, the addressbits positions A0-A3, respectively, represent the gross test, the pausetest, X march and Y march. Address bit positions A5-A10, respectively,represent short disturb, long disturb, page disturb, burn in, write onerow, and read one column. Address bit position AII and bank addressesBA0 and BAI, respectively, represent output enable, sub array option,and internal clock/external clock selection.

A clock is needed for the BIST operation. BIST circuit has an internaloscillator which provides this clock with a fixed frequency. There is anexternal clock option built in for engineering and debug purposes whichallows the clock frequency to be varied if needed. The decision to usean external or internal clock is loaded in when a BIST request isdetected during power up.

The previously mentioned address range registers 340 include a group offour registers which receive and store, respectively, row and columnaddresses which determine start and stop addresses in the memory array220 where the test or tests should commence and end. Such addresses areused at the discretion of the person responsible for testing the device50. A default condition runs the tests throughout the entire memorystarting at row address 0 and column address 0. Thus the address rangeregisters 340 are reset to zero when the device 50 is initially put intothe active self-test mode. Thereafter the range addresses may be storedif desired during a DFT mode load operation.

During prototype debug on any early production chip, it is unlikely thata complete array will work correctly. Under such circumstances, the BISTtest will always fail since there will always be some cells which do notwork and will cause failure of the BIST tests. This means that the BISTlogic cannot be completely checked out since there will never be anapplication of BIST which permits the BIST logic to return a “PASS”signal until a completely good part is manufactured. A second problemoccurs during debug of the chip. If the BIST is limited to the completearray test, it cannot be used to target a subset of the array as an aidfor debug.

Sub array testing permits the starting address to be any location andthe ending address to be any location and they cna be loaded into theBIST address range registers via a DFT mode. The BIST testing is appliedbetween the starting and ending locations including one address locationof the starting address is the same as the ending location. The addressranges can be changed each time prior to BIST application therebypermitting the BIST to be applied to islands to fault free areas throughrepeated testing.

Referring now to FIGS. 24 and 25, there is shown a program controlcircuit that includes a program counter 360. The BIST program counter360 is included in the built-in self-test arrangement 60 for controllingtest sequences. Upon initiation of the active self-test mode, the BISTprogram counter 360 is reset by a signal B_RESET to its zero state. Thisis a sequential logic arrangement in which its current state, incombination with the state of data furnished by a BIST ROM registerdetermines the next state of the GIST program counter 360. The statechanges in response to a clock signal B_CLK B applied from the clockgenerator 350.

FIG. 26 is a logic schematic for a BIST ROM address decoder 370, shownin

FIG. 3. The state of the BIST program counter 360 is represented by agroup of binary signals that are applied by way of a bus 361 to theinput of the BIST ROM address decoder 370. The group of input binarysignals are decoded into a 1 out of 64 code for selecting a row of datafrom the BIST ROM 400.

FIG. 27 shows the schematic layout of an sixty-four word by twelve bitBIST ROM 400 of FIG. 4. The BIST ROM 400 is a sixty-four row read onlymemory that stores sequences of instructions for controlling severaldifferent test routines used to determine the operability of the memoryarray 220. The proposed BIST scheme has ten algorithms stored in a ROM.Each algorithm is typically made up of a series of instructions. The tenalgorithms take up sixty-four ROM words and each Rom word has twelvebits. Each row address applied to the GIST ROM 400, accesses a row ofdata stored therein in response to a clock signal B_CLK.

The first instruction in an algorithm is an instruction to determine ifthat test is being enabled. Whether the test is enabled or not isdecided at power up when test selection information is loaded into thetest enabled register. All or any subset of tests can be selected. Ablock of test code is skipped if a ‘0’ logical value is loaded in thecorresponding tests enabled register.

For most algorithms, the last instruction in an algorithm tests for‘inverted pattern’. In a typical test, two data patterns (‘0’ and ‘1’)need to be performed. This means each test is executed twice, once foreach pattern. This instruction looks at a register to determine if thecurrent test is executing the normal pattern (pattern ‘0’). If it is,then the program counter will jump to the start of the test and repeatthe test with an inverted pattern. If the instruction determines that itis executing an inverted pattern, it will simple increment the programcounter by i and move on to the next test since both data patterns havealready been executed.

Referring now to FIG. 28, there is shown the table of data stored in theBIST ROM 400. In the lefthand column is the list of names of tenalgorithms which represent the tests which may be selected to be runplus an instruction that all tests have been completed.

The first algorithm GROSS is for running a gross test. There are fourrows of data, each representing one instruction for the gross test.Addresses for the instructions are shown in hexadecimal code in thesecond column from the left. The righthand column presents the mnemonicname for each instruction. The main block of the table presents the datawhich is stored in the BIST ROM 400. There are twelve columns of data inthe table. In the table, there is a bold horizontal line setting off thebeginning and ending addresses of each algorithm. Thus there is a boldline below the address hex 3 which is the fourth instruction in thealgorithm GROSS.

The four instructions in the algorithm GROSS are jump not test enable(jnte) to pause, write all cells zero, read all cells with expected datazero, and invert data and jump if not previously inverted (divnj). TheZ1 is the label at which to jump.

Referring now to FIG. 29, there are two major types of instructions. Thefirst type is the program control instruction. This type of instructiondeals with the flow of the program. The program control instruction areintroduced to control BIST operation. The second type is the arrayaccess instruction which control how the cells of the array are to beaccessed and written to and/or read from They are basically the sametype of instruction usually found on a tester which are translated intoBIST ROM format. An instruction that reads back a pattern from the array(220) is an example of a array access instruction.

The instruction is divided into two parts. The first six bits of aninstruction defines the actions to be taken and the last six bits is thedata associated with the instruction.

For an array access instruction such as read whole array, the first sixbits define the type of array access, whether it is a write or a read orboth, whether the full array, only the rows, or the columns areaccessed. To read from the whole array, Read (bit 11), X(bit9) andY(bit8) are set to 1. The last six bits of the instruction providesinformation on how the whole array is read including the timing sets tobe used (Tset0, Tset 1), the data values (ED) and pattern ( ) andwhether the address is to be incremented or decremented.

For a program control instruction such as the ‘test enable’ instruction.The four most significant bits are ‘0’, Bit7 and Bit6 determines theprogram control type. The last six bits provides the address to bejumped to if indeed the decision is made to jump.

There is an unconditional jump instruction. ‘110011’ for the mostsignificant 6 bits, and the address to jump to for the 6 leastsignificant bits.

The last instruction in the ROM, see FIG. 28, is an idle instruction tosignal the end of BIST operation. The last six bits of this instructionholds the revision number of the current 256M.

There are many possible combinations of instructions that can beprogrammed with the current circuits. If a new algorithm is needed for aBIST operation. It can be included by simply reprogramming the ROM.Combinations of options available to make up an instruction are asfollows:

Timing Access Array sets mode Addressing size ‘0’ or ‘1’ Data PatternTSETA READ INC FULLA PATTERN0 CKBD TSETB WRITE DEC ROW PATTERN1ALTERNATE TSETC RMW COL

Referring now to FIGS. 30 and 31, there is shown logic schematics for aROM logic circuit 410. As each of the instructions is read out of theBIST ROM 400, the data is applied to the input of the ROM logic circuit410, which is a combinational logic circuit that decodes the twelve bitsof data of each instruction word. Output signals from the ROM logiccircuit 410 are applied to the data inputs of a ROM register circuit 420where the data are stored for the duration required to completeexecution of the instruction.

When the built-in self-test arrangement 60 is put into the activeself-test mode, the BIST program counter 360 is reset. This initialstate of the program counter 360 is decoded through BIST ROM addressdecoder 370 to produce a row address signal for the BIST ROM 400. Afterthe row address is applied and in response to a clock signal, the datafrom the selected row of the BIST ROM 400 is read out. All of the dataread out from the selected row is applied to the input of the ROM logiccircuit 410.

FIGS. 30 and 31 present an exemplary logic schematic diagram of the ROMlogic circuit 410 that performs desired combinational logic functions onthe row of data applied from the selected row of the BIST ROM 400. Thecircuit 410 produces a group of output signals resulting from logicalprocessing through the circuit 410. This group of output signals fromthe circuit are applied in parallel to and are stored in the ROMregister 420, which is arranged to forward them by way of a BIST databus 421 to the pass/fail comparator circuit 430, by way of a group ofleads 422 to the BIST timing generator 440, and by way of a programcounter input bus 423 to the BIST program counter 360.

Referring now to FIG. 31, there is shown a logic schematic of anexemplary ROM register circuit 420. The data applied onto the programcounter input bus 423 is accepted by the program counter 360 only when aprogram control instruction is being executed. Data applied to the BISTtiming generator controls generation of self-test signals, such asB_RAS_, B_CAS_and B_WE_, which perform the functions of their similarlynamed control signals RAS_, CAS_, and WE_, used by a microprocessor toaccess the memory during normal operation. Signals, applied by way ofthe BIST data bus 421 to the pass/fail comparator circuit 430, includememory access instructions and a data bit.

FIG. 44 presents the logic schematic diagram of an exemplary pass/failcircuit 430 that can be used in the built-in self-test arrangement 60.The pass/fail circuit 430 is responsive to control signals and a databit received by way of the BIST data bus 421 from the ROM register 420to produce a sequence of groups of data signals to be written into atleast one bank of the memory array 220 in response to a writeinstruction from the BIST ROM 400. Pass/fail circuit 430 also receivescontrol signals and a data bit by way of the BIST data bus 421 and readout data on a DQ bus 431 from the memory array 60, in response to a readinstruction. In this instance, the data bit from the BIST data bus 421is processed to agree with the state of a prior-existing data bit thatwas written into the array location/locations from which the data on theDQ bus 431 is read. The processed data bit is referred to as an expecteddata bit. This expected data bit is compared with the data read from thememory array 60 and the result of the comparison is a Pass signal if thecompared data are equal and is a Fail signal if the compared data arenot equal. The Pass signal, indicating that the circuits traversed bythe written in and read out data and the storage cell are operatingcorrectly, is a low level signal. A Fail signal, indicating that somepart of the circuits traversed by the written in and read out data orthe storage cell is malfunctioning, is a high level signal.

A Fail signal is transmitted by way of a lead B_Pass/Fail to a PFregister 432 where it is stored. Subsequently the stored Fail signal canbe conveyed through a DQ buffer circuit 230 to an external pad of thememory device. PF register 432 is reset upon entry of the activeself-test mode. Pass signals are ignored and in effect discarded becausethey are a low level and the PF register is reset to begin the testoperation. An assumption is made that the device is operable. So asingle test failure is the only information of importance to beretained.

Referring to FIG. 32, a VHDL language description of the Pass/Failcomparator is shown. VHDL language is a standard language for describinglogic circuits used by designers today. Using signal CKBDI for checkerboard data. B_ALTERNATE for alternate data, B_RDATA for expected data(ED) and B_WDATA for write data (DAT), the data which is expected towrite and to compare the read data is calculated. The read data iscompared to the calculated expected data to determine if the test passedor failed.

Referring to FIG. 33, the functional table is given. The 32 bits of thearray 220 compressed to 4 data bits using 8 DQ lines. The compressiontable is shown in FIG. 33. B_PF_ results gives the pass or faildepending on the corresponding values shown in the table.

Build in Self Test (BIST)

10.00 Overview of BIST

In memory functional testing, various algorithms are used to to test adevice. Tester are normally used to generate test signals, whichrepresent the test algorithms, to the device. The outputs of the deviceare then sampled by the tester to determine pass or fail. For very highdensity memory devices such as 256M SDRAM, test time is expected to bevery high thus making it not practical or cost efficient to do allfunctional testing on a tester. Build In Self Test (BIST) circuits aredesigned to replace the testers. The role of BIST circuits (FIGS. 51,52)is to generate all the test signals associated with the test algorithmsinternal to the device. Instead of using a tester, a device under testwill power up in BIST mode, if certain voltage conditions are satisfied,and test itself In BIST mode, BIST generated signals takes control ofcontrol signals such as RAS and CAS as well as all the addresses anddata.

Advantage of BIST: Test Cost Savings.

The build In self circuit is made up of the following (FIG. 60):

Oscillator with a 50 Mhz frequency

Overvoltage detector on A4

64 word X 12 Bit ROM

6 Bit Program counter

6 to 64 decoder

14 bit X register, 9 bit Y register and 14 bit refresh register

Timing generators

Address range counters

Shift register for storage of enabled test algorithms

Internal pattern data generator

Pass fail compare circuits

Output mutiplexer.

BIST circuit takes up 1.9 mm² in silicon area and occupies about 0.5% ofthe total chip area. It is located at the right most end of the chip,critical speed interface logic such as the address interface is placednear the speed path to avoid slowing down the normal operation. Controllogic, ROM and various other BIST logic is placed on the end of the chipwhere silicon area is lower priority than in the center or intersectionareas of the chip (FIG. 61):

10 algorithms were implemented in the 256M BIST scheme, Summary for themare show (FIG. 62).

Behavior for BIST circuits has been described in VHDL code and simulatedusing QVHDLsim. ALL BIST circuits except for the oscillator, overvoltage detector and ROM were synthesized using Autologic 2.

10.01 BIST Entry and Exit

BIST Entry and Exit scheme is designed to satisfy the followingrequirements.

1. Simple Entry and Exit sequence with no timing required in order forBIST to operate with low cost BIST boards.

2. No inadvertent BIST entry.

3. Ability to alternate between Normal and BIST mode for read and writefor testing BIST circuit operation.

It is important to have a simple entry and exit sequence so that BISToperation can be done on a simple BIST board with very high parallelismwithout having to worry about signal quality.

BIST Entry

To do this, BIST entry is designed such that only DC signal is needed.To get into BIST, all that is needed is an overvoltage on A4 and low onCS during power up (and high or low on other pins depending the optionschosen). This will put the device into a BIST standby mode (FIG. 63).

While in standby mode the device will operate as if it is in normal modeand it can perform read, write and regular MRS or even DFT commands.

A rising edge on the CS pin will start the BIST operation while deviceis in BIST standby mode.

It is important to have a delay from overvoltage detection to actuallystarting BIST operation because it gives the user the opportunity tostart the BIST operation at a time suitable to him.

It allows the user to use a DFT mode to set the address range, forexample or giving the device enough time to settle down to a steadystate before BIST operation began. It will also allow the user to writea row in normal mode and later enter BIST to read back the data in thearray in BIST mode (or vice versa) to check BIST circuit functionality.

BIST Exit

A falling edge of CS will exit all BIST operation unconditionally andthe only way to get back into BIST mode is to power down and then powerup again with overvoltage.

It is also imperative to prevent inadvertent BIST entry. To achievethis, overvoltage can only be detected at power up at the falling edgeof VUPB. It cannot be detected at any other time. This and the CSinterlock during power up gives the device only one chance to go intoBIST standby mode. This minimizes the chance of inadvertent BIST entryduring device operation.

When an overvoltage is detected at A4, it generates a B_SR_LOAD pulse.This pulse loads the information available on the other 13 addressesinto a shift register. These contain the information on which tests areto be executed while in BIST as well as-iformation for clock option,array size option and output enable option. Details on these can befound in B_SHIFT block.

The Entry and Exit timing sequence for BIST operation is summarized here(FIG. 64):

An example of a power up setup is on an example pinout (FIG. 65).

10.1 BOV

INPUTS: B_OVDETECT, B_DONE, TLBADDRNG, PBCSB_BIST, VUPB OUTPUTS: B_SRLOAD, B_IN_EN, B_EXTCLK, B_PADDIS BIST_EN BIST_MCEN # OF CIRCUITS:1/chip LOCATION: right side of chip.

The function of this circuit is to detect overvoltage during power up.It does not detect overvoltage at any other time.

During power up, at the falling edge of VUPB, a pulse VUPBN which givesabout 16 ns to charge up B_OVERDETECT is generated. The falling edge ofVUPBN will set the overvoltage latch OVLATCHB to low if B_OVERDETECT isa high and if PBCSB_BIST is low. A low on OVLATCHB signals the detectionof overvoltage and entry to BIST standby mode.

During the BIST standby mode, if PBCSB_BIST subsequently goes high,BIST_EN will go high to signal the start of BIST operation. A high tolow transition of PBCSB_BIST will reset the overvoltage latch and setOVLATCHB to high. It also brings BIST_EN to low signaling BIST exit.

If there is no overvoltage detected during power up, B_OVERDETECT willbe low, and it will not get into BIST standby mode.

If overvoltage is detected at power up and OVLATCHB latch is set atpower up, B SR LOAD 20 pulse is generated to load the information on theaddress lines into a shift register. This information determines whichtest will be performed in BIST mode.

B_PADDIS and B_IN_EN are used to control the multiplexing of BISTsignals and external signals. In normal operation, external signals areused. This is the normal mode in which the device operates.

If overvoltage is detected at power up and the device is ready for BISToperation, B_IN_EN will be set to high to allow address signals to getto BIST circuits. In TLBADDRNG DFT mode, where the start and stopaddresses are loaded into the BIST circuit, B_IN_EN is also high.

In BIST operation, external signals are ignored and BIST signals (B_ADDRx) are used.

B_EXTCLK is used to bring in the external clock signal to the BISTcircuits for two purposes. The external clock is needed for the externalclock option. It is also needed during the DFT mode to load in theaddress range (TLBADDRNG).

10.2 BOVBIAS

INPUTS: ESDA4, VUPB OUTPUTS: B_OVDETECT 4 OF CIRCUITS: 1/chip LOCATION:right corner.

BOVBIAS is the overvoltage detector. Node OV will be charged up if thereis an overvoltage condition on ESDA4 after VUPB goes low. This will setB_OVDETECT to high. A voltage higher than 5.2V on ESDA4 is sufficientfor an overvoltage to be detected.

10.3 BIROSC (FIG. 34)

INPUTS: PB_CLKBIST, BIST_EN, MD_SLFR, B_CLKMUX OUTPUTS: B_IRCLK,BCLK_EN, B_CLK # OF CIRCUITS: 1/chip LOCATION: right corner of chip

The BIROSC is the primary oscillator that generates the clock signal forall BIST operation. It is a dual mode oscillator circuit. In BIST mode(when BIST_EN is high), it operates in the high frequency mode andprovides B_CLK to the BIST circuit to synchronously control BISToperation. In normal mode (when BIST_EN is low), it operates at the lowfrequency mode and produce a low frequency B_IRCLK used for self refreshmode. It is also a low frequency clock for the VBB circuits (FIG. 66).

This circuit is also used to control internal and external clock forBIST operation.

If the device power up in BIST mode and the internal clock option isselected, B_CLKMUX will be set to low. This will set BCLK_EN to high totake over control of the CLK signals going into the device. Theoscillator will generate 20 ns clock needed for BIST operation.Externally CLK needs to be pulled low. If B_CLKMUX is high, externalclock option is chosen, PB_CLKBIST will be used as the clock for BIST.

Nodes BNN and IRNN are used to compensate for process variation toensure a more constant oscillator frequency.

10.4 BIRBIT (FIG. 33 a)

INPUTS: CLK OUTPUTS: Q # OF CIRCUITS: 6/chip LOCATION: right corner ofchip

This circuit is used to divide the CLK frequency by half. Q has half thefrequency of CLK.

10.5 BSLFRCLK

INPUTS: B IRCLK, VUPB OUTPUTS: SLFR TIME # OF CIRCUITS: 1/chip LOCATION:right corner of chip

SLFR_TIME is the clock used for self refresh and also in VBB pump. Itoscillates with a period of about 8 US.

10.9 BTIMEDRV

INPUTS: B PCOUNTER(0) OUTPUTS: B PCOUNTERD(9:0), B PCOUNTERDB(9:0) # OFCIRCUITS: 1/chip LOCATION: right corner of chip

Generate true and bar signals from the primary counter in the BISTcircuit. The true and bar signals go into the B_TGEN (FIG. 47) circuitto generate the timing sets.

10.10 BRM (FIG. 27)

INPUTS: B_ROM_ADDR(63:0) OUTPUTS: B_WORD(11:0) # OF CIRCUITS: 1/chipLOCATION: right corner of chip.

The BRM has 64 ROM words and each word is 12 bit wide. The decoder inBIST circuit decides which ROM word is to be read.

10.10.1 Gross (Zrom) Algorithm

1. Write array with selected pattern

2. Read array to confirm selected pattern was written Note:

-   -   a) Selected pattern is an all 0's pattern, an all 1's pattern or        any combination of 0's and 1's.        10.10.2 Pause Algorithm

1. Write array with selected pattern

2. Wait for specified time to elapse

3. Read array to confirm selected pattern written is retained

Note:

-   -   a) Selected pattern is an all 0's pattern, an all 1's pattern        and/or any combination of 0's and 1's.        10.10.3 Xmarch Algorithm

1. Write array with background pattern

2. For each row read the background pattern and write the invertedpattern into each column

3. For each row read the inverted pattern and write the original patterninto each column

4. Read original background pattern to confirm no defect has occurred.

Note:

-   -   a) Background pattern is an all 0's pattern, an all 1's pattern        or combination of 0's and 1's.        10.10.4 Ymarch Algorithm

1. Write array with background pattern

2. For each column read the background pattern and write the invertedpattern into each row

3. For each column read the inverted pattern and write the originalpattern into each row

4. Read original background pattern to confirm no defect has occurred

Note:

-   -   a) Background pattern is an all 0's pattern, an all 1's pattern        or combination of 0's and 1's.        10.10.5 Sdist Algorithm

1. Write array with background pattern (optional)

2. Write target row with disturb pattern repeatedly until specified timehas elapsed

3. Refresh

4. Read neighboring rows to target row to confirm no disturb type errordefect has occurred

5. Return background pattern to target row

6. Repeat by targeting all rows in the chip

Notes:

-   -   a) Disturb pattern is an all 1's pattern, an all 0's pattern or        any combination of 1's and 0's    -   b) Background pattern is an all 0's pattern, an all 1's pattern        or combination of 0's and 1's    -   c) Steps 4 and 5 can be interchanged.        10.10.6 Ldist Algorithm

Algorithm steps are the same as for Sdist Algorithm. The Ldist algorithmutilizes a different time set to lengthen the time between a RASB andCASB pulses.

10.10.7 Pdist Algorithm

Algorithm steps are the same as for Sdist Algorithm. The Pdist algorithmwrites the disturb pattern in a page mode. In the page mode, the rowremains activated until all columns are written into the row.

10.10.8 Burnin Algorithm

1. Continually write array with selected pattern

Note:

-   -   a) Selected pattern is an all 0's pattern, an all 1's pattern or        any combination of 0's and 1's.        10.10.9 Write 1 Rom Algorithm

1. Write one row in the array with selected pattern

Note:

-   -   a) Selected pattern is an all 0's pattern, an all 1's pattern or        any combination of 0's and 1's.        10.10.10 Read 1 Column Algorithm

1. Read one column in the array

Note:

-   -   a) Selected pattern is an all 0's pattern, an all 1's pattern or        any combination of 0's and 1's.        10.10.11 Finish Algorithm

Set the DONE flag to true and deactivate the program counter.

10.11 to 10.18 BRM0_7 to BRM56_63

INPUTS: B_ROM_ADDRx where x ranges from 0 to 63 OUTPUTS: B_WORD0 toB_WORD11 # OF CIRCUITS: 1/chip LOCATION: right corner of chip

The BIST ROM circuits is divided into 8 individual circuits with eachcircuit having 8 words.

10.19 BROMDRV (FIG. 53)

INPUTS: B_WORD, B_PRECHARGE, B_ROM_WORD OUTPUTS: B_WORD0..B_WORD11 # OFCIRCUITS: 1/chip LOCATION: right corner of chip

BROMDRV is a driver circuit for the 12 bits of a ROM word. The 12 bitsof data line is precharged once every 2 clock cycle during BISToperation when the device is not in the array access mode (FIG. 68).

10.20 BIST (FIG. 51,52)

INPUTS: BIST_EN,B_EEPRMOPT,TLBADDRNG, PB_CLKBIST,B_SR_LOAD,B_YSTOPE,B_XSTOPE,B_YSTARTE,B_XSTARTE,VUPB, TLBMON3 TLBMON2,TLBMON1,TLBROMR,B_ROM_WORD B_RASA1I,B_RASB1, B_RASC1,B_RASA2,B_RASB2,B_RASC2,B_CASA1,B_CASB1,B_CASC1,B_CASA2, B_CASB2,B_CASC2,B_OEA1,B_OEB1,B_OEC1,B_OEA2,B_OEB2,B_OEC2, B_DMUXA1,B_DMUXB1,B_DMUXCI,B_DMUXA1,B_DMUXB1,B_DMUXC1, B_YMUXA1,B_YMUXB1,B_YMUXC1,B_YMUXA1,B_YMUXB1,B_YMUXCI B_FIXCOUNTA,B_FIXCOUNTB, B_FIXCOUNTCB_PERIODA1,B_PERIODB1, B_PERIODC1, OUTPUTS: B_DONE,B_OUTPUTEN,B_CLKMUX,B_ROM_PRECHARGE,B_DQL(23:18), B_RASB,B_CASB,B_WDATA_TIMB,B_WB,B_COUNTER,B_ADDR,B_PF_RESULT, B_ROM_ADDR,B_DQ # OF CIRCUITS: 1/chipLOCATION: right corner of chip.

All circuits in this block is synthesized using Autologic2 after codingin VHDL code. It has 8 major blocks:

1. B_CLK_GEN (FIG. 22): Generates auxiliary clocks of different phases.Also generates the precharge signal for the ROM

2. B_ADDRCTL (FIG. 8-12): Generates and control the addresses of thecells to be accessed

3. B_CROM (FIG. 40): Stores the test conditions in the ROM, holds theprogram counter and decoder

4. B_PG_CONTROL (FIG. 24): Controls the flow of test program

5. B_PASSFAIL: Generates the data pattern to be written to array,perform pass fail comparison

6. B_DQMUX: Control the multiplexing for BIST signals to appear at theDQs

7. B_ADDRNG (FIG. 16-21): Control the start and stop address of BISToperation.

8. B_TGEN (FIG. 47-50): Control and generates the timing of all theControl, Data, and address signals.

10.21 B_CLK_GEN

INPUTS: B_CLK,VUPB,B_SR_LOAD,B_DONE, B_ROM_PRE_EN, OUTPUTS:B_CLK_B,B_RESET,B_CLK_C, B_CLK_A,B_ROM_PRECHARGE,B_CLK_AD # OF CIRCUITS:1/chip LOCATION: right corner of chip

This circuit takes the BIST primary clock B_CLK and makes 4 other clocksout of it in 2 clock cycles. Rising edge of B_CLK_A updates the newestinstruction pointed to by the Program counter. Decoding of the newestinstruction starts at this edge. Rising edge of B_CLK_AD is the clockthat executes the newly decoded instruction. At the rising edge ofB_CLK_B, a decision is made on the action to take with the programcounter B_CLK_C acts as a reset signal.

It also generates the precharge signal for the ROM (FIG. 69).

10.22 B CROM (FIG. 40)

INPUTS: B_CLK_A,B_CLK_C,B_ROM_WORD, TLBROMR,B_RESET,B_INS_CONPLETED,B_PC_LOAD,B_CLK_B,B_PC_LO_ADDR, B_RPTINV_STATE OUTPUTS:B_RPT_N_INV,B_YEN,B_DONE,B_DECR, B_ALTERNATE,B_INC,B_XEN,B_TIME_SET1,B_XEN,B_TIME_SET0,B_CKBD,B_CHK_KEY, B_REN,B_READ,B_PAUSE,B_JUMP,B_CHK_TIMEOUT,B_WRIT B_JMP_ADDR, B_ROM_ADDR,B_RDATA,B_WDATA # OFCIRCUITS: 1/chip LOCATION: right corner of chip

B_CROM controls the operations of the ROM. It is made up of a decoder, aprogram counter and B_ROMLOGIC (FIG. 30) which decodes what the currentinstruction. The program counter points to word 0 during power up.Subsequently in BIST operation, PC will point to the relevant word inthe ROM to execute the desired instruction. The decoder decodes the 6bit program counter to point to one of the 64 words in the ROM (FIG.70).

10.23 B_DECODER (FIG. 26)

INPUTS: B_PC_ADDR OUTPUTS: B_ROM_ADDR # OF CIRCUITS: 1/chip LOCATION:right corner of chip

This is a simple 6 to 64 decoder. 6 bit input address from the programto be decoded into 64 words in the ROM.

10.24 B_PC (FIG. 25)

INPUTS: B_PC_LOAD,B_PC_LD_ADDR,B_CLK_B, B_RESET,B_INS_COMPLETED OUTPUTS:B_PC_ADDR, # OF CIRCUITS: 1/chip LOCATION: right corner of chip

The program counter points to an instruction in the ROM to be executed.B_CLK_B is used to change the program counter to its new value.

At the completion of an instruction, program counter can change in 2ways. It can either be incremented by 1 (normal program flow), or it canjump to any one of the 64 words of the ROM (conditional or unconditionaljump).

At the rising edge of B_CLK_B, the circuit will look at two signals thatcomes in: B_PC_LOAD and B_INS_COMPLETED.

If B_PC_LOAD is a high, it will do a jump by loading the PC with theaddress that appears on B_PC_LD_ADDR. If B_INS_COMPLETED is a high, itwill increment the PC by 1 and proceed to the next instruction. Ifneither B_PC_LD_ADDR nor B_INS_COMPLETED is high then no action will betaken, and the PC will remain the same. B_PC_LOAD and B_PC_LD_ADDRcannot be high at the same time (FIG. 71).

If one wants to read the content of the ROM and output it to the DQpins, ROM read DFT mode can be used. The device needs to be powered upwith overvoltage, then perform a DFT entry to TLBROMR while in BISTstandby mode, then pull CS high to go into BIST mode.

The external clock is used to move from one ROM word to the next ROMword. The PC is incremented every 2 clock cycles, i.e. on every risingedge of B_CLK_B. This is done by forcing B_INS_COMPLETED to be high allthe time during the DFT TLROMR mode.

10.25 B_ROMLOGIC (FIG. 30,31)

INPUTS: B_ROM_WORD,TLBROMR,B_CLK_C, B_CLK_A,B_RESET OUTPUTS:B_JMP_ADDR,B_DONE,B_CHK_TIMEOUT, B_RPT_N_INV,B_TIMESET1,B_TIMESET0,B_DECR,B_XEN,B_JUMP,B_CHK_KEY B_ALTERNATE,B_REN,B_WRITE,B_PAUSE,B_READ,B_RDATA,B_WDATA,B_CKBD, B_INC,B_YEN,B_CLK_ARESET # OF CIRCUITS:1/chip LOCATION: right corner of chip

B_ROMLOGIC decodes the 12 bits of data contained in an instruction word.There are two major types of instructions. First is the program controlinstruction. This type of instruction deals with the flow of theprogram. They are introduced to control BIST operation. Second is thearray access instruction, and they control how the array is to be testedThey are basically the same type of instruction usually found on atester. They are translated into BIST format in this case.

An instruction is divided into two parts. The first six bits of aninstruction defines the actions to be taken, and the last six bits isthe data associated with the instruction.

For an read whole array instruction, Read(bit 11),X(bit9) and Y(bit8)are set to 1. The last six bits of the instruction provides informationon how the read whole array is to be achieved: i.e. timing sets to beused, data pattern to be used, etc.

For a program control instruction, The 4 most significant bits are ‘0’,Bit 7 and Bit 6 determines the program control instruction. The last sixbits provides the address to be jumped to if indeed the decision is madeto jump.

There is an unconditional jump instruction. ‘110011’ for the mostsignificant 6 bits, and the address to jump to for the 6 leastsignificant bits.

The last instruction in the ROM is an idle instruction to signal the endof BIST operation. The last six bits of this instruction holds therevision number of the current 256M (FIG. 72).

The instruction above will perform a read, from the whole array (both Xand Y enabled), using timing set A, expected data ‘0’, true internaldata pattern, and same data among the DQ.

There are many possible combination of instructions that can beprogrammed with the current circuits. If a new algorithm is need forBIST. It can be included by simply reprogramming the ROM. Combinationsof options are available to make up an instruction (FIG. 73).

10.26 B_TGEN

INPUTS: B_READ,B_RESET,B_PAUSE,B_YCARRY_1, B_CLK,B_WRITE,B_TIME_SET0,B_TIME_SET1,B_INS_COMPLETED,B_REN, B_OEA1,B_OEA2,B,B_OEBI,B_OEB2,B,B_OEC1,B_OEC2,B_RASAI,B_RASA2, B_RASBI,B_RASB2,B_RASCI,B_RASC2,B_CASAI,B_CASA2,B_CASBI,B_CASB2, B_CASCI,B_CASC2,B_DMUXAI,B_DMUXBI,B_DMUXC1,B_DMUXAI,B_DMUXBI, B_DMUXCI,B_YMUXAI,B_YMUXBI,B_YMUXCI,B_YMUXA1,B_YMUXB1, B_YMUXCI B_FIXCOUNTA,B_FIXCOUNTB,B_FIXCOUNTC B_PERIODAI,B_PERIODB1,B- PERIODC1, OUTPUTS:B_YSELB,B_RASB,B_CASB,B_WB,B_OEB, B_PERIODB,B_ROM_PRE_EN,B_WDATA_TIMB,B_TIMECNT_REF, B_PCOUNTER # OF CIRCUITS: 1/chip LOCATION:right corner of chip

The timing sets used in BIST tests are generated through the use of theprimary clock generated in BIROSC (FIG. 34) block. The clock is a 50 MHzclock, and the resolution of the timing sets is 20 ns. A counter countsthe number of rising edges of the primary clock. The control timing isset by specifying a specific count of the counter. In the example below,Activate is specified at count 2, and Deactivate is specified at count12 (FIG. 74).

Altogether 3 types of timing sets, namely short, long and page timingset were used in the 10 algorithms implemented in BIST (FIG. 75).

10.27 B_COUNTER10B (FIG. 39)

INPUTS: B_CNTR10_CLK,B_CNTR10_CLR OUTPUTS: B_CNTR10 # OF CIRCUITS:1/chip LOCATION: right corner of chipRising edge of B_CNTR10_CLK will increment the counter by 1. The counteris always enabled.10.28 B_COUNTER10A (FIG. 38)

INPUTS: B_CNTR10_CLK,B_CNTR10_EN, B_CNTR10_CLR OUTPUTS: B_CNTR10 # OFCIRCUITS: 1/chip LOCATION: right corner of chipIf B_CNTR10_EN is high, rising edge of B_CNTR10_CLK will increment thecounter by I10.29 B ADDRCTL

INPUTS: B_PAUSE,B_PERIODB,B_RESET,B_CLK_AD,B_YEN,B_XEN,B_REN,B_INC,B_YSELB, BIST_EN,B_DECR,B_SUBARRAY,B_XADDR_STP,B_YADDR_STP, B_XADDR_STR,B_YADDR_STR OUTPUTS:B_YCLR,B_XCLR,B_RCARRY,B_YCARRY, B_XCARRY,B_YNOCARRYJ,B_YCARRY_1,B_XNOCARRY,B_LSB_YADDR, B_LSB_XADDR,B_ADDR # OF CIRCUITS: 1/chipLOCATION: right corner of chipB_ADDRCLL has two blocks, B_ADDR_CTR which contains all the addresscounters and B_RESET_EN which provide controls to detect overflows ofaddress counters.10.30 B_ADDR_CTR

INPUTS: B_SUBARRAY,B_INC,B_DECR,B_ADDRCLK,B_XCLR,B_YCLR,B_RCLR,B_XEN,B_YEN, B_REN,B_YSELB,BIST_EN,B_XADDR_STP,B_YADDR_STP,B_XADDR_STR, B_YADDR_STR OUTPUTS:B_RCARRY,B_YCARRY,B_XCARRY, B_YNOCARRYJ,B_YCARRY_1,B_XNOCARRY,B_LSB_YADDR, B_LSB_XADDR,B_ADDR # OF CIRCUITS: 1/chipLOCATION: right corner of chip

B_ADDR_CTR has 3 counters, the row counter, the column counter and therefresh counter. A multiplexer decides which counter value is used asthe B_ADDR signal during BIST operation. In normal access, only the Xcounter and Y counter are used. B_YSELB is the signal used to choosebetween the column and row address (FIG. 76). During refresh, only theRefresh counter is used.

The addressing mux sequence and controlled by a combination ofB_ADDRCLK, B_INC and B_YSELB. B_PERIODB pulse generates B_ADDRCLK whichincrement the address counter by 1.

Low on B_YSELB indicates selection of column address. High on B_YSELBindicates selection of row address. B_INC will increment the enabledaddress counter by 1 (FIG. 77).

10.31 B_ROW_CTR (FIG. 46,55)

INPUTS: B_INC,B_DECR,B_ADDRCLK,B_XCLR, B_XEN,B_XSTART,B_XSTOP OUTPUTS:B_CARY,B_XCARRY,B_XNOCARRYJ, B_XADDR # OF CIRCUITS: 1/chip LOCATION:right corner of chip

The X counter is a 14 bit counter, and it holds the current row address.It can count forward and backward. depending the state of B_DECR. A lowon B_DECR means counting forward, i.e. increment the counter value by 1with every rising edge of the B_ADDRCLK. The counter is enabled byB_XEN.

If the subarray option is chosen. The counter will be start with thestart address loaded in earlier. An overflow will be issued once thestop address is reached.

10.32 B_COL_CTR (FIG. 37)

INPUTS: B_INC,B_DECR,B_ADDRCLK,B_YCLR, B_YEN,B_YSTART,B_YSTOP OUTPUTS:B_CARY,B_YCARRY,B_YNOCARRYJ, B_YADDR # OF CIRCUITS: 1/chip LOCATION:right corner of chip

The Y counter is a 9 bit counter, and it holds the current columnaddress. It can count forward and backward depending the state ofB_DECR. A low on B_DECR means counting forward, i.e. increment thecounter value by 1 with every rising edge of the B_ADDRCLK. The counteris enabled by B_YEN.

If the subarray option is chosen, the counter will start with the startaddress loaded in earlier. An overflow will be issued once the stopaddress is reached.

10.33 B_REF_CTR (FIG. 45)

INPUTS: B_ADDRCLK,B_RCLR,B_REN,B_XSTART, B_XSTOP, OUTPUTS:B_RCARRY,B_RADDR # OF CIRCUITS: I/chip LOCATION: right corner of chip

The refresh counter is a 14 bit counter. It only counts forward. Thecounter value is incremented by 1 with every rising edge of theB_ADDRCLK if B_REN is high. The refresh counter is used in the threedisturb tests only. During the refresh instruction, a pseudo read isdone for all the rows that are enabled. This refreshes the array but nopassifail comparison is done.

10.34 B_ADDR_RESET_EN (FIG. 35,36,54)

INPUTS: B_INC,B_PERIODB,B_XEN,B_YEN,B_REN, B_RCLR,B_REN,B_X2YLINKB_RESET,B_CLK_C,B_CLK_AD,B_XCARRY, B_YCARRY,B_RCARRY,B_PAUSE OUTPUTS:B_ADDRCLK,B_YENABLE,B_XRESET, B_YRESET,B_RRESET # OF CIRCUITS: 1/chipLOCATION: right corner of chip

This circuit generates the clock (B_ADDRCLK) used to increment ordecrement the address counters. B_ADDRCLK is generated in 2 ways namelyduring an INC instruction or during the end of an array-access cycle.The reset signals XCLR, YCLR and RCLR) are generated at the rising edgeof B_CLK_C. These reset the counters to its original state whenoverflows occur.

B_X2YLINK is used to join the X and Y register together for whole arraytests. The CARRY signal is used to signal the completion of an arrayaccess instruction. It is sent to the program counter to tell it to moveon to the next instruction.

10.35 B_PG_CONTROL

INPUTS: VUPB,B_RESET,BIST_EN,B_DONE, B_TIMEOUT_CHK,B_INC,B_XEN,B_XCARRY,B_XNOCARRYJ,B_XCLR,B_YEN,B_YCARRY, B_YNOCARRYJ,B_YCLR,B_REN,B_RCARRY,B_CHK_KEY,B_RPT_N_INV,B_JUMP, B_TIMEOUT_REF,B_ADDRU,B_ADDRL,B_CLK_C,B_CLK_A,B_SR_LOAD OUTPUTS: B_INS_COMPLETED,B_PC_LOAD,B_RPTINV_STATE,B_SUBARRAY B_CLKMIUX,B_OUTPUTEN # OF CIRCUITS: 1/chipLOCATION: right corner of chip

This block contains the circuit used for controlling the Programcounter. It also contains a shift register which holds information onwhich test to perform.

Upon completion of an instruction, this block will make a decision onwhether to increment the program counter or to load the program counterwith a new address.

10.36 B SHIFT (FIG. 7)

INPUTS: VUPB,BIST_EN,B_DONE,B_SR_CLK, B_SR_LOAD,B_ADDRU,B_ADDRL OUTPUTS:B_LSB_SR,B_SUBARRAY,B_CLKMUX, B_OUTPUTEN # OF CIRCUITS: 1/chip LOCATION:right corner of chip

B_SHIFT register holds the data latched in during power up. Every timethe test_en instruction is executed once, the shift register is shiftedright by 1 position. This instruction looks at the last bit to see ifthe test is enabled (FIG. 78).

10.37 B ECOMPARE10 (FIG. 43)

INPUTS: B_ECMPR10_EN,B_AIN9_0,B_BIN9_0 OUTPUTS:B_ECMPR10_RSLT,B_ECMPR10_RSLTB # OF CIRCUITS: 1/chip LOCATION: rightcorner of chip

This is a simple comparator. If the comparison enable signal is high,then B_ECMPR10_RSLT will be high, and the bar signal will be low if the2 10 bit inputs are equal. Alternatively, if the 2 inputs are not equal,B_ECMPR10_RSLT will be low. If the comparison is not enabled, then bothoutputs will be low regardless of the inputs.

10.38 B_PASSFAIL (FIG. 33,44)

INPUTS: B_RESET,B_CLK,B_RDATA,B_WDATA, B_OEB,B_ALTERNATE,B_CKBD,B_WRITE,B_LSB_XADDR,B_LSB_YADDR,B_DQ OUTPUTS: B_WEVNVAL,B_WODDVAL,B_PF_RESULT,B_DODD,B_DEVEN # OF CIRCUITS: 1/chip LOCATION: right corner of chip

This circuit generates internal data pattern to be written to the array.It also generates the expected data for pass fail comparison. The timingfor comparison is controlled by B_OEB timing.

10.39 B_DQMUX (FIG. 41,42)

INPUTS: TLBROMR,TLBMON1,TLBMON2,TLBMON3,B_WRITE,B_WDATA_TIMB,B_ROM_WORD, B_WEVNVAL,B_WODDVAL,B_RASB,B_CASB,B_WB,B_CLK,B_DODD,B_DEVEN, B_OEB,B_ADDR OUTPUTS: B_DQ,B_DQL # OFCIRCUITS: 1/chip LOCATION: right corner of chip

This circuits is a huge multiplexer to multiplex the different signalsthat go out to the outside world. In the normal mode, only the pass failsignals go to the outside. In the other three monitor modes, differentcontrol signals are brought to the outside (FIG. 79).

10.40 B_ADDRNG

INPUTS: B_EEPRMOPT,PB_CLKBIST,TLBADDRNG, B_ADDR,B_XSTARTE,B_XSTOPE,B_YSTARTE,B_XSTOPE, OUTPUTS: B_XADDR_STR,B_XADDR_STP,B_YADDR_STR,B_YADDR_STP # OF CIRCUITS: 1/chip LOCATION: right corner ofchip

This circuit is used to load start and stop address for sub array BISTtesting. A DFT mode is used to get into this situation. When this DFTmode is entered, the next 4 rising edges of the clock will load in the Xand Y start and stop address (FIG. 80).

10.41 BONEXX

INPUTS: IN OUTPUTS: OUT # OF CIRCUITS: 1/chip LOCATION: right corner ofchip

This is the ‘1’ bit of the ROM and BONExx represents a high. IN isconnected to the ‘wordlines’ (B_ROM_ADDR(x)). OUT is always prechargedto high and does not get pulled to low whether IN is high or not (FIG.81).

10.42 BZEROXX

INPUTS: IN OUTPUTS: OUT # OF CIRCUITS: 1/chip LOCATION: right corner ofchip

This is 0 bit of the ROM and BZEROxx represents a low. IN is connectedto the ‘wordlines’ (B_ROM_ADDR(X)). OUT (B_WORD(Y)) is precharged tohigh; but if this cell is selected and IN goes high, OUT will be pulledto low (FIG. 82)

The foregoing describes the arrangement and operation of an exemplaryintegrated circuit memory device having built-in self-test circuitry.The described arrangement and method of and other arrangements madeobvious in view there of are considered to be within the scope of theappended claims.

1. An integrated circuit including a memory array and test circuitry,the test circuitry comprising: a memory circuit containing a pluralityof test algorithms; logic circuitry having an input coupled to thememory circuit, the logic circuitry comprising: a memory logic whichreceives test instructions output from the memory circuit, processes theinstructions, and produces a plurality of output signals; registercircuitry which stores the output signals; a test circuit receiving theoutput signals stored in register; and wherein in response to a writeinstruction from the memory circuit the test circuit receives data readfrom the memory array and compares the data read from the memory arraywith expected data, and outputs a result signal representative of thecomparison.
 2. The integrated circuit of claim 1, wherein one of thetest algorithms contained in the memory circuit is a march algorithm. 3.The integrated circuit of claim 1, wherein one of the test algorithmscontained in the memory circuit is a disturb algorithm.
 4. The testcircuitry of claim 1 further comprising a program counter coupled tocontrol the operation of the memory circuit and also coupled to receivethe output signals stored in the register circuitry.
 5. The integratedcircuit of claim 1, wherein the integrated circuit is a synchronousrandom access memory device.
 6. The integrated circuit of claim 1,wherein the integrated circuit is a synchronous dynamic random accessmemory device (SDRAM).